Hongwei Qu, Ph.D.

Professor Electrical and Computer Engineering Department 430 EC; (248) 370-2205; Fax: (248) 370-4633 qu2@www.zhongqiwg.com secs.www.zhongqiwg.com/~qu2/

Education

• Ph.D. in Electrical Engineering, University of Florida, Gainesville, Florida, 2006
• M.S. in Physics, Florida International University, Miami, Florida, 2002
• M.S. in Electrical Engineering, Tianjin University, Tianjin, China, 1993
• B.E. in Electrical Engineering, Tianjin University, Tianjin, China, 1988

Teaching

• ECE 3105: Electronic circuits and devices
• ECE 5134: Fundamentals of MEMS
• ECE 5130: Integrated devices and circuits
• ECE 3105: Advanced electronics design

Research

• Micro-electro- mechanical systems (MEMS)
• Solid-state sensors
• CMOS-MEMS technology
• 微机电系统在生物医学中的应用和安全性
• Nanotechnology and devices
• MEMS/NEMS modeling

Selected Publications

1. P. Qu; G. Sreenivasulu; R. Bidthanapally; V. Petrov; G. Srinivasan and
H. Qu, “Fabrication and characterization of a MEMS nano-Tesla
ferromagnetic-piezoelectric magnetic sensor array”,Applied Physics
letters, 108, 242412 (2016).

2. G. Sreenivasulu; P. Qu; V. Petrov; H. Qu and G. Srinivasan, “Sensitivity
enhancement in magnetic sensors based on ferroelectric-bimorphs and
multiferroic composites”,Sensors, 16 (2), 2016, pp. 262-274.

3. H. Qu, “CMOS-MEMS Technologies and Devices”,Micromachines, 7
(1), 2016, pp.14-32.

4. G. Sreenivasulu; P. Qu; V. Petrov; H. Qu and G. Srinivasan, “Magneto-
electric interactions at bending resonance in an asymmetric multiferroic
composite”,Journal of Applied Physics, 117 (17), 2015, 174105.

5. G. Sreenivasulu, P. Qu, E. Piskulich, V. Petrov, Y. Fetisov, A. Nosov, H.
Qu, and G. Srinivasan, “Shear strain mediated magneto-electric effects in
composites of piezoelectric lanthanum gallium silicate or tantalate and
ferromagnetic alloys”,Applied Physics Letters, 105, 032409 (2014).

Professional Association

Member, IEEE